Details
BUY IXFH16N80P https://www.utsource.net/itm/p/11552838.html
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 800 | - | V | |
Gate-Source Voltage | VGS | -20 | - | 20 | V | |
Continuous Drain Current | ID | - | 16 | - | A | TC = 25掳C |
Continuous Drain Current (TC = 75掳C) | ID(TC) | - | 11.2 | - | A | TC = 75掳C |
Pulse Drain Current | IDM | - | 50 | - | A | tp = 10 渭s, IGT = 4 A |
Total Power Dissipation | PTOT | - | 200 | - | W | TC = 25掳C |
Junction Temperature | TJ | - | - | 150 | 掳C | |
Storage Temperature Range | TSTG | -55 | - | 150 | 掳C | |
Thermal Resistance, Junction to Case | R胃JC | - | 0.6 | - | 掳C/W | |
Gate Charge | QG | - | 135 | - | nC | VGS = 15 V, ID = 16 A |
Input Capacitance | Ciss | - | 1950 | - | pF | VDS = 400 V, f = 1 MHz |
Output Capacitance | Coss | - | 165 | - | pF | VDS = 400 V, f = 1 MHz |
Reverse Transfer Capacitance | Crss | - | 280 | - | pF | VDS = 400 V, f = 1 MHz |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid damage to the leads or the body.
- Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
Mounting:
- Ensure that the device is securely mounted to a heatsink to manage heat dissipation effectively.
- Use thermal compound between the device and the heatsink to improve thermal conductivity.
Biasing:
- Apply the gate-source voltage (VGS) within the specified limits to avoid damage to the gate.
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
Current Limiting:
- Do not exceed the continuous drain current (ID) ratings, especially at higher temperatures.
- For pulse applications, ensure that the pulse duration and peak current do not exceed the specified limits.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it stays within the safe operating range.
- Use the thermal resistance (R胃JC) data to design an effective cooling system.
Capacitance Considerations:
- Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in your circuit design to optimize performance.
Storage:
- Store the device in a dry, cool place within the specified storage temperature range (TSTG).
Testing:
- Before final assembly, test the device under controlled conditions to ensure it meets the required specifications.
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