IXFH16N80P

IXFH16N80P

Category: Transistors

Specifications
SKU
11552838
Details

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Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - 800 - V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - 16 - A TC = 25掳C
Continuous Drain Current (TC = 75掳C) ID(TC) - 11.2 - A TC = 75掳C
Pulse Drain Current IDM - 50 - A tp = 10 渭s, IGT = 4 A
Total Power Dissipation PTOT - 200 - W TC = 25掳C
Junction Temperature TJ - - 150 掳C
Storage Temperature Range TSTG -55 - 150 掳C
Thermal Resistance, Junction to Case R胃JC - 0.6 - 掳C/W
Gate Charge QG - 135 - nC VGS = 15 V, ID = 16 A
Input Capacitance Ciss - 1950 - pF VDS = 400 V, f = 1 MHz
Output Capacitance Coss - 165 - pF VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 280 - pF VDS = 400 V, f = 1 MHz

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid damage to the leads or the body.
    • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure that the device is securely mounted to a heatsink to manage heat dissipation effectively.
    • Use thermal compound between the device and the heatsink to improve thermal conductivity.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified limits to avoid damage to the gate.
    • Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
  4. Current Limiting:

    • Do not exceed the continuous drain current (ID) ratings, especially at higher temperatures.
    • For pulse applications, ensure that the pulse duration and peak current do not exceed the specified limits.
  5. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it stays within the safe operating range.
    • Use the thermal resistance (R胃JC) data to design an effective cooling system.
  6. Capacitance Considerations:

    • Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in your circuit design to optimize performance.
  7. Storage:

    • Store the device in a dry, cool place within the specified storage temperature range (TSTG).
  8. Testing:

    • Before final assembly, test the device under controlled conditions to ensure it meets the required specifications.
(For reference only)

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