LR3410=IRLR3410TRPBF

LR3410=IRLR3410TRPBF

Category: Transistors

Specifications
Details

BUY LR3410=IRLR3410TRPBF https://www.utsource.net/itm/p/11553201.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-Source On-Resistance RDS(on) - 6.5 - VGS = 10V, ID = 20A
Gate Threshold Voltage VGS(th) 1.0 - 2.5 V ID = 250μA
Continuous Drain Current ID - - 38 A TC = 25°C
Pulse Drain Current ID(PULSE) - - 120 A TP = 10ms, TC = 25°C
Total Power Dissipation PD - - 170 W TC = 25°C
Junction Temperature TJ - - 175 °C -
Storage Temperature Range TSTG -65 - 150 °C -

Instructions for Use:

  1. Mounting and Handling:

    • Handle the IRLR3410TRPBF with care to avoid damage to the leads or body.
    • Ensure proper mounting on a heatsink if operating at high power levels.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly to your circuit.
    • Apply appropriate gate drive voltage to ensure minimum RDS(on).
  3. Thermal Management:

    • Monitor junction temperature to stay within specified limits.
    • Use adequate heatsinking to dissipate heat generated during operation.
  4. Operating Conditions:

    • Operate within the specified continuous and pulse current ratings.
    • Avoid exceeding the maximum total power dissipation.
  5. Storage and Environmental Considerations:

    • Store in a dry environment within the specified storage temperature range.
    • Protect from electrostatic discharge (ESD) which can damage the device.
  6. Safety Precautions:

    • Always follow safety guidelines when working with electrical components.
    • Ensure proper insulation and isolation of high voltage circuits.
(For reference only)

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