Details

---

BUY HY4008W 80V 200A TO-247 MOS https://www.utsource.net/itm/p/11553317.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS	-	80	-	V
Gate-Source Voltage	VGS	-10	-	15	V
Continuous Drain Current	ID	-	200	-	A
Pulse Drain Current (t = 10 渭s)	IDM	-	300	-	A
Gate Charge	Qg	-	120	-	nC
Input Capacitance	Ciss	-	3600	-	pF
Output Capacitance	Coss	-	1100	-	pF
Reverse Transfer Capacitance	Crss	-	1200	-	pF
RDS(on) at VGS = 10V	RDS(on)	-	2.5	-	m惟
Junction Temperature	Tj	-55	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use

1. Handling Precautions:

   • Handle the MOSFET with care to avoid damage to the device.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure the MOSFET is mounted on a heatsink if operating at high current or power levels.
   • Use thermal paste between the MOSFET and heatsink to improve heat dissipation.

3. Biasing:

   • Apply the gate-source voltage (VGS) within the specified range (-10V to +15V).
   • Ensure the drain-source voltage (VDS) does not exceed 80V.

4. Current Handling:

   • The continuous drain current (ID) should not exceed 200A.
   • For pulse applications, ensure the pulse duration is within the specified limits (e.g., 10 渭s for 300A).

5. Thermal Management:

   • Monitor the junction temperature (Tj) to ensure it does not exceed 175掳C.
   • The storage temperature range is -55掳C to 150掳C.

6. Testing:

   • Test the device under controlled conditions to ensure it meets the required specifications.
   • Use appropriate test equipment and methods to avoid damaging the device.

7. Storage:

   • Store the MOSFET in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against ESD.

8. Soldering:

   • Follow recommended soldering profiles to avoid thermal shock.
   • Ensure the soldering iron is properly grounded and set to the correct temperature.

9. Documentation:

   • Refer to the datasheet for detailed information and additional parameters not listed here.
   • Consult application notes and technical documents for specific usage guidelines.

(For reference only)