Details

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BUY FGA25N120 FGA25N120AND FGA25N120ANDTU CHINA ORIGINAL https://www.utsource.net/itm/p/11553985.html

Parameter	FGA25N120	FGA25N120AND	FGA25N120ANDTU
Type	N-Channel MOSFET	N-Channel MOSFET	N-Channel MOSFET
VDS (Max) (V)	1200	1200	1200
VGS (Max) (V)	卤20	卤20	卤20
ID (Continuous) (A)	25	25	25
RDS(on) (Typ) (m惟)	350	350	350
Power Dissipation (W)	240	240	240
Junction Temperature (掳C)	-55 to 150	-55 to 150	-55 to 150
Package	TO-247	TO-247	TO-247
Lead Free	Yes	Yes	Yes
RoHS Compliant	Yes	Yes	Yes

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid static damage.
   • Use proper ESD protection equipment when handling the device.

2. Mounting:

   • Ensure good thermal contact with a heatsink if operating at high power levels.
   • Use a suitable thermal compound between the device and the heatsink to improve heat dissipation.

3. Electrical Connections:

   • Connect the Drain (D), Source (S), and Gate (G) terminals correctly.
   • Ensure that the VGS voltage does not exceed the maximum rating of 卤20V.
   • Use appropriate gate resistors to control switching speed and reduce electromagnetic interference (EMI).

4. Operating Conditions:

   • Operate within the specified temperature range (-55掳C to 150掳C).
   • Ensure that the continuous drain current (ID) does not exceed 25A.
   • Monitor the power dissipation to stay within the 240W limit.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to prevent damage.

6. Testing:

   • Test the device using a suitable MOSFET tester or multimeter to ensure it is functioning correctly before installation.

7. Disposal:

   • Dispose of the device according to local regulations for electronic waste.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)