Details

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BUY IR4427STRPBF https://www.utsource.net/itm/p/11554414.html

Parameter	Description	Value
Part Number	Component Identifier	IR4427STRPBF
Type	Component Type	MOSFET
Package	Package Type	TO-220FP
VDS (Max)	Drain-to-Source Voltage	55V
VGS (Max)	Gate-to-Source Voltage	卤20V
ID (Max)	Continuous Drain Current	18A
PD (Max)	Power Dissipation	115W
RDS(on) (Max)	On-State Resistance at VGS = 10V	6.5m惟
Qg (Total)	Total Gate Charge	110nC
fT (Typical)	Transition Frequency	3.9MHz
Operating Temperature Range	Junction Temperature	-55掳C to 150掳C
Storage Temperature Range	Storage Temperature	-65掳C to 150掳C

Instructions for Use:

1. Handling Precautions:

   • ESD Sensitive: The IR4427STRPBF is sensitive to electrostatic discharge (ESD). Use proper ESD protection equipment and follow recommended handling procedures.
   • Polarity: Ensure correct polarity when connecting the device to avoid damage.

2. Mounting:

   • Heatsinking: Due to its high power dissipation capability, use a suitable heatsink to maintain the junction temperature within safe operating limits.
   • Torque Specifications: Follow the recommended torque values for screw terminals to ensure a secure connection without damaging the package.

3. Electrical Connections:

   • Drain (D): Connect to the load or power supply.
   • Source (S): Connect to the ground or return path.
   • Gate (G): Apply the control signal to switch the MOSFET on or off.

4. Thermal Management:

   • Thermal Resistance: The thermal resistance from junction to case (RthJC) is 0.5掳C/W. Ensure adequate cooling to keep the junction temperature below 150掳C.
   • Heatsink Selection: Choose a heatsink with sufficient thermal capacity and surface area to dissipate the heat generated by the device.

5. Operational Considerations:

   • Gate Drive: Use a gate driver circuit to provide the necessary gate voltage and current for fast switching.
   • Overcurrent Protection: Implement overcurrent protection to prevent damage from excessive current.
   • Snubber Circuits: Consider using snubber circuits to suppress voltage spikes during switching.

6. Testing:

   • Initial Testing: Before applying full load, perform initial tests at reduced power levels to verify correct operation.
   • Thermal Monitoring: Monitor the temperature of the device during operation to ensure it remains within the specified range.

7. Storage:

   • Environment: Store the device in a dry, cool environment to prevent moisture damage.
   • Packaging: Keep the device in its original packaging until ready for use to protect against physical damage and ESD.

For detailed specifications and additional information, refer to the datasheet provided by the manufacturer.

(For reference only)