Details

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BUY MX29GL128FLT2I-90G https://www.utsource.net/itm/p/11556927.html
IC FLASH 128M PARALLEL 56TSOP

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	Vcc	2.7	-	3.6	V	Operating voltage range
Standby Current	Icc	-	5	-	μA	Current consumption in standby mode
Active Current	Icc	-	10	-	mA	Current consumption during active operation
Programming Current	Ipp	-	20	-	mA	Current required for programming
Erase Time	tE	-	3.5	-	s	Typical time to erase the entire chip
Page Program Time	tPP	-	0.4	-	ms	Typical time to program a page (256 bytes)
Sector Erase Time	tSE	-	0.5	-	s	Typical time to erase a sector (64 Kbytes)
Block Erase Time	tBE	-	1.0	-	s	Typical time to erase a block (1 Mbyte)
Data Retention	-	-	-	20	years	Guaranteed data retention at 85°C
Operating Temperature	Toper	-40	-	85	°C	Operating temperature range
Storage Temperature	Tstg	-65	-	150	°C	Storage temperature range
Package Type	-	-	-	-	-	48-pin TSOP II (II)
Memory Density	-	-	-	-	128 Mbit	Total memory size
Organization	-	-	-	-	-	16M x 8, 8M x 16, 4M x 32, 2M x 64
Access Time	tAA	-	70	-	ns	Access time for read operations
Write Protect Pin	WP#	-	-	-	-	Write protect pin (active low)
Hold Pin	HOLD#	-	-	-	-	Hold pin (active low) to pause read/write operations

Instructions:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.
   • Connect the power supply to the Vcc pin and ground (GND) pin.

2. Standby Mode:

   • To enter standby mode, set the chip select (CS#) pin high. The current consumption will be reduced to approximately 5 μA.

3. Active Mode:

   • To activate the device, set the CS# pin low. The current consumption will increase to approximately 10 mA.

4. Programming:

   • Before programming, ensure the programming current (Ipp) is available, typically around 20 mA.
   • Use the appropriate command sequence to write data to the desired address. The typical page program time is 0.4 ms.

5. Erasing:

   • To erase the entire chip, use the chip erase command. The typical erase time is 3.5 seconds.
   • For sector or block erases, use the respective commands. Sector erase time is 0.5 seconds, and block erase time is 1.0 second.

6. Data Retention:

   • The device guarantees data retention for up to 20 years at an operating temperature of 85°C.

7. Temperature Range:

   • The device can operate within a temperature range of -40°C to 85°C and can be stored between -65°C and 150°C.

8. Package:

   • The device comes in a 48-pin TSOP II (II) package.

9. Write Protect:

   • To prevent accidental writes, connect the write protect (WP#) pin to ground (active low).

10. Hold Function:

    • To pause read or write operations, set the hold (HOLD#) pin low (active low).

11. Access Time:

    • The access time for read operations is 70 ns.

12. Memory Organization:

    • The device supports multiple memory organizations: 16M x 8, 8M x 16, 4M x 32, and 2M x 64. Choose the appropriate organization based on your application requirements.

(For reference only)