Details

---

BUY TPS2829DBVR https://www.utsource.net/itm/p/11561003.html
IC HS MOSFET DRIVER SOT-23-5

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Input Voltage	VIN	1.0	-	5.5	V
Continuous Output Current	IOUT	-	4.0	-	A	@ 25°C ambient
Peak Output Current	IPEAK	-	6.0	-	A	@ 25°C ambient
On-State Resistance	RON	-	30	-	mΩ	@ 25°C ambient, VIN = 3.3V
Off-State Leakage Current	ISD	-	1	-	μA	@ 25°C ambient, VIN = 5.5V
Power Dissipation	PD	-	-	1.2	W	@ 25°C ambient
Operating Temperature	TOPR	-40	-	85	°C
Storage Temperature	TSTG	-65	-	150	°C

Instructions for Use:

1. Power Supply:

   • Ensure the input voltage (VIN) is within the specified range of 1.0V to 5.5V.
   • The device can handle a continuous output current of up to 4.0A and peak currents up to 6.0A.

2. Thermal Management:

   • The on-state resistance (RON) is typically 30mΩ at 25°C ambient temperature and 3.3V input voltage. Ensure proper heat dissipation to maintain the device within its operating temperature range (-40°C to 85°C).
   • The power dissipation (PD) should not exceed 1.2W to avoid overheating.

3. Leakage Current:

   • The off-state leakage current (ISD) is typically 1μA at 25°C ambient temperature and 5.5V input voltage. This should be considered when designing circuits that require low standby power consumption.

4. Environmental Conditions:

   • Store the device in a temperature range of -65°C to 150°C to ensure long-term reliability.

5. Circuit Design:

   • Place the device close to the load to minimize parasitic inductance and improve transient response.
   • Use appropriate decoupling capacitors near the input and output pins to filter noise and stabilize the power supply.

6. Handling:

   • Handle the device with care to avoid static discharge, which can damage the internal components.
   • Follow standard ESD (Electrostatic Discharge) precautions during assembly and testing.

(For reference only)