Details

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BUY STP14NK50ZFP,P14NK50ZFP https://www.utsource.net/itm/p/11564866.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	500	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	14	-	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	70	-	A	tp = 10ms, TC = 25掳C
Power Dissipation	PTOT	-	-	115	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	-	0.85	掳C/W
Total Gate Charge	QG	-	90	-	nC	VGS = 15V
Input Capacitance	Ciss	-	1300	-	pF	VDS = 25V
Output Capacitance	Coss	-	170	-	pF	VDS = 25V
Reverse Transfer Capacitance	Crss	-	65	-	pF	VDS = 25V
On-State Resistance	RDS(on)	-	1.5	-	惟	VGS = 10V, ID = 14A

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the device.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use appropriate gate drive circuits to ensure reliable operation.

3. Thermal Management:

   • Monitor the junction temperature to prevent overheating.
   • Use thermal paste between the device and heat sink for better heat dissipation.

4. Operating Conditions:

   • Do not exceed the maximum ratings for drain-source voltage, gate-source voltage, and continuous/pulse drain current.
   • Ensure the power dissipation is within the specified limit to avoid thermal runaway.

5. Storage and Transportation:

   • Store in a dry, cool place to prevent moisture damage.
   • Follow ESD (Electrostatic Discharge) precautions during handling and installation.

6. Testing:

   • Perform initial testing at low power levels to verify correct operation.
   • Regularly inspect the device for signs of wear or damage.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)