Details

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BUY KF7N80F https://www.utsource.net/itm/p/11565290.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 10V, ID = 8A	-	22	-	mΩ
Gate Charge	Qg	VGS = 10V	-	4.5	-	nC
Input Capacitance	Ciss	VDS = 16V	-	730	-	pF
Output Capacitance	Coss	VDS = 16V	-	290	-	pF
Reverse Transfer Capacitance	Crss	VDS = 16V	-	110	-	pF
Threshold Voltage	Vth	ID = 1mA	1.5	2.5	3.5	V
Continuous Drain Current	ID	TC = 25°C	-	-	8	A
Pulse Drain Current	IDM	Pulse Width ≤ 300μs	-	-	48	A
Total Power Dissipation	PD	TC = 25°C	-	-	80	W
Junction Temperature	Tj	-	-55	-	150	°C
Storage Temperature	Tstg	-	-55	-	150	°C

Instructions for Use:

1. Handling Precautions: The KF7N80F is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.

2. Mounting: Ensure the device is mounted on a suitable heatsink if operating at high power levels to maintain junction temperature within specified limits.

3. Gate Drive: Apply gate voltage within the recommended range to avoid damage or unreliable operation. Typical gate voltage is 10V for optimal performance.

4. Overcurrent Protection: Implement overcurrent protection circuits to prevent damage from excessive drain current.

5. Pulse Operation: For pulse applications, ensure that the pulse width does not exceed 300μs to stay within safe operating limits.

6. Capacitance Considerations: Account for input, output, and reverse transfer capacitances in circuit design, especially in high-frequency applications.

7. Temperature Monitoring: Monitor the junction temperature to ensure it stays within operational limits, particularly in high-power or high-temperature environments.

(For reference only)