Details

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BUY UT108N03L https://www.utsource.net/itm/p/11565311.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	UT108N03L	-
Type	Component Type	MOSFET	-
VDS	Drain-Source Voltage	30	V
VGS	Gate-Source Voltage	卤20	V
ID	Continuous Drain Current	8.0	A
PTOT	Total Power Dissipation	65	W
RDS(on)	On-State Resistance at VGS=10V	4.5	m惟
QG	Gate Charge	79	nC
fSW	Switching Frequency	500	kHz
TJ	Junction Temperature Range	-55 to 150	掳C
Package	Housing	TO-220	-
Storage Temperature	Operating Range for Storage	-55 to 150	掳C

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Handle the device with care to avoid mechanical stress on the leads and package.

2. Mounting:

   • Ensure proper thermal management by using a heatsink if necessary, especially when operating at high power levels.
   • Follow the recommended soldering profile to avoid thermal shock and ensure reliable connections.

3. Electrical Connections:

   • Connect the gate, drain, and source terminals according to the circuit diagram.
   • Use appropriate gate drive circuits to ensure the MOSFET operates within its safe operating area (SOA).

4. Operating Conditions:

   • Do not exceed the maximum ratings for V_DS, V_GS, I_D, and P_TOT.
   • Monitor the junction temperature to prevent overheating and potential failure.

5. Testing:

   • Test the device under controlled conditions to verify its performance and reliability.
   • Use a suitable test setup that can accurately measure the parameters such as R_DS(on) and Q_G.

6. Safety:

   • Always follow safety guidelines when handling high-voltage and high-power components.
   • Use protective equipment such as gloves and goggles when necessary.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)