IXTQ76N25T

IXTQ76N25T

Category: Transistors

Specifications
Details

BUY IXTQ76N25T https://www.utsource.net/itm/p/11565422.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage V CES - - 700 V
Emitter-Collector Voltage V ECS - - 700 V
Collector Current I C - - 25 A Tc = 25°C
Continuous Collector Current I CM - - 14 A Tc = 80°C
Power Dissipation P T - - 160 W Tc = 25°C
Junction Temperature T J - - 175 °C
Storage Temperature T STG -55 - 175 °C
Total Device Dissipation P D - - 220 W Case temperature

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the maximum power dissipation.
    • Handle with care to avoid damage to the pins and body.
  2. Electrical Connections:

    • Verify correct polarity before applying voltage to prevent damage.
    • Use appropriate wire gauge for current ratings to avoid overheating.
  3. Thermal Management:

    • Monitor junction temperature to ensure it does not exceed 175°C.
    • Consider forced air cooling or liquid cooling for high-power applications.
  4. Storage and Environment:

    • Store in a dry, cool environment within the specified storage temperature range.
    • Protect from electrostatic discharge (ESD) during handling.
  5. Operational Testing:

    • Perform initial testing at low power levels to verify functionality.
    • Gradually increase power while monitoring temperatures and performance.
  6. Safety Precautions:

    • Always disconnect power when making adjustments or changes.
    • Follow all safety guidelines to protect against electrical hazards.
(For reference only)

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