Details

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BUY FMV11N90E,11N90E https://www.utsource.net/itm/p/11565441.html

Parameter	Symbol	Value	Unit	Notes
Drain-Source Voltage	VDS	90	V	Maximum
Gate-Source Voltage	VGS	卤20	V	Maximum
Continuous Drain Current (TC = 25掳C)	ID	11	A	Maximum
Continuous Drain Current (TC = 75掳C)	ID	7.7	A	Maximum
Pulse Drain Current (TC = 25掳C, tp = 10 ms, Duty Cycle = 1%)	ID(p)	22	A	Maximum
Power Dissipation (TC = 25掳C)	PD	130	W	Maximum
Junction Temperature	TJ	-55 to +175	掳C	Operating Range
Storage Temperature	TSTG	-65 to +150	掳C	Operating Range
Thermal Resistance (Junction to Case)	R胃JC	0.8	掳C/W	Typical
Total Gate Charge	QG	45	nC	Maximum at VGS = 15 V, ID = 11 A
Input Capacitance	Ciss	1250	pF	Maximum at VDS = 90 V, f = 1 MHz
Output Capacitance	Coss	240	pF	Maximum at VDS = 90 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	120	pF	Maximum at VDS = 90 V, f = 1 MHz
On-State Resistance (VGS = 10 V)	RDS(on)	0.12	惟	Maximum at ID = 11 A, TJ = 25掳C
On-State Resistance (VGS = 4.5 V)	RDS(on)	0.20	惟	Maximum at ID = 11 A, TJ = 25掳C
Threshold Voltage	VGS(th)	2.0 to 4.0	V	Typical at ID = 250 渭A, TJ = 25掳C
Gate-Source Leakage Current	IGS	卤100	nA	Maximum at VGS = 卤20 V, TJ = 25掳C
Drain-Source Leakage Current (VGS = 0 V)	IDSS	10	渭A	Maximum at VDS = 90 V, TJ = 25掳C

Instructions:

1. Handling Precautions:

   • Handle the device with care to avoid damage to the pins and the silicon die.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure proper heat sinking to manage thermal dissipation, especially during high current operation.
   • Use recommended PCB layout guidelines to minimize parasitic inductances and capacitances.

3. Biasing:

   • Apply the gate voltage carefully to avoid exceeding the maximum ratings.
   • Use appropriate gate drive circuits to ensure reliable switching.

4. Operation:

   • Operate within the specified temperature range to ensure reliable performance.
   • Monitor the junction temperature to prevent thermal runaway.

5. Testing:

   • Use the specified test conditions for accurate parameter measurements.
   • Refer to the datasheet for detailed test conditions and methods.

6. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Follow recommended storage practices to maintain device integrity.

(For reference only)