Details

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BUY IXTP60N10T https://www.utsource.net/itm/p/11565456.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCEO	-	-	1000	V
Emitter-Collector Voltage	VECS	-	-	1000	V
Gate-Emitter Voltage	VGE	-15	-	20	V
Continuous Collector Current	IC	-	60	-	A
Pulse Collector Current	IC(pulse)	-	180	-	A	tp = 10 渭s, IGC = 10 A
Power Dissipation	PTOT	-	-	300	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within safe limits.
   • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.

2. Biasing:

   • Apply gate-emitter voltage (V_GE) within the specified range to avoid damage.
   • Ensure that the gate resistor is appropriate to limit current and prevent oscillations.

3. Current Handling:

   • Do not exceed the continuous collector current (I_C) rating.
   • For pulse applications, ensure that the pulse width and frequency do not exceed the specified limits.

4. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (V_CEO) or emitter-collector voltage (V_ECS).
   • Ensure that the gate-emitter voltage (V_GE) is within the specified range to avoid gate damage.

5. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.
   • Store the device in a temperature-controlled environment to prevent damage from extreme temperatures.

6. Handling:

   • Handle with care to avoid mechanical stress.
   • Use appropriate ESD protection to prevent damage from static electricity.

7. Testing:

   • Perform initial testing at low power levels to verify correct operation.
   • Regularly inspect the device for signs of wear or damage.

By following these guidelines, you can ensure reliable and efficient operation of the IXTP60N10T transistor.

(For reference only)