P12N60 12A 600V

P12N60 12A 600V

Category: Transistors

Specifications
Details

BUY P12N60 12A 600V https://www.utsource.net/itm/p/11582148.html

Parameter Symbol Value Unit Description
Maximum Drain Current ID 12 A Continuous at Tc = 25°C
Peak Pulse Drain Current Ipp 75 A t = 10 μs, Repetition Rate = 1/s
Drain-Source Breakdown Voltage V(BR)DSS 600 V At IDS = 250 μA
Gate-Source Voltage VGS ±20 V Maximum
Total Power Dissipation PD 140 W Case Temperature = 25°C
Junction Temperature TJ -55 to +175 °C Operating Range
Storage Temperature TSTG -55 to +150 °C Operating Range
Thermal Resistance, Junction to Case RθJC 0.8 °C/W

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings provided in the table.
    • Ensure proper heat sinking if operating near maximum power dissipation.
  2. Mounting:

    • Mount the device on a suitable heatsink to maintain junction temperature within specified limits.
    • Follow mechanical guidelines for mounting screws and thermal interface materials.
  3. Electrical Connections:

    • Ensure all connections are secure and insulated appropriately to prevent short circuits.
    • Apply gate signals carefully to avoid damage from overvoltage or excessive current.
  4. Storage:

    • Store in a dry environment within the storage temperature range to prevent damage.
  5. Operation:

    • Operate within the specified junction temperature range to ensure reliable performance.
    • Monitor device temperature during operation, especially under high load conditions.
  6. Testing:

    • When testing, use appropriate safety equipment and procedures to protect against electrical hazards.
(For reference only)

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