Details

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BUY FQP30N06L 30N06L 30A 60V TO-220 MOS FAIRCHILD https://www.utsource.net/itm/p/11582280.html

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Drain-Source Voltage	VDSS	-	-	60	V
Continuous Drain Current	ID	-	30	-	A	@ TC = 25掳C
Gate-Source Voltage	VGS	-10	-	10	V
Gate Charge	QG	-	48	-	nC
Input Capacitance	Ciss	-	1790	-	pF	@ VDS = 20V, VGS = 10V
Output Capacitance	Coss	-	390	-	pF	@ VDS = 20V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	150	-	pF	@ VDS = 20V, VGS = 10V
RDS(on) at VGS = 10V	RDS(on)	-	0.028	-	惟	@ ID = 30A, TC = 25掳C
RDS(on) at VGS = 4.5V	RDS(on)	-	0.045	-	惟	@ ID = 30A, TC = 25掳C
Power Dissipation	PD	-	-	115	W	@ TA = 25掳C, 胃JA = 62掳C/W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within safe limits.
   • Handle with care to avoid damage to the leads and body.

2. Biasing and Operation:

   • Apply gate-source voltage (V_GS) within the specified range to control the MOSFET.
   • Ensure that the drain-source voltage (V_DSS) does not exceed 60V to prevent breakdown.
   • Keep continuous drain current (I_D) below 30A to avoid overheating.

3. Thermal Management:

   • Use appropriate thermal management techniques to ensure the junction temperature (T_J) does not exceed 150掳C.
   • Consider using a heatsink or forced air cooling if operating near maximum power dissipation.

4. Storage and Environment:

   • Store the device in a dry, cool environment within the storage temperature range (-55掳C to 150掳C).
   • Protect from static electricity by handling with ESD-safe equipment.

5. Testing and Troubleshooting:

   • Test the device under controlled conditions to verify its performance parameters.
   • If the device fails to operate as expected, check for proper biasing, thermal management, and connections.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)