Details

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IC DRIVER HIGH SIDE 2CH PWRSO10

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Supply Voltage	VCC	4.5	-	40	V
Continuous Drain Current	ID	-	2.5	-	A
Peak Pulse Current	IDM	-	6.0	-	A	tp = 10 ms, duty cycle ≤ 1%
Gate Threshold Voltage	VGS(th)	1.0	1.7	2.5	V	@ ID = 250 μA
On-State Resistance	RDS(on)	-	0.045	-	Ω	@ VGS = 4.5 V, ID = 2.5 A
Input Capacitance	Ciss	-	1200	-	pF	@ VDS = 10 V, f = 1 MHz
Output Capacitance	Coss	-	40	-	pF	@ VDS = 10 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	25	-	pF	@ VDS = 10 V, f = 1 MHz
Total Power Dissipation	PTOT	-	-	2.0	W	Ta = 25°C
Junction Temperature	TJ	-	-	150	°C
Storage Temperature	TSTG	-40	-	150	°C

Instructions for Use:

1. Supply Voltage (V_CC):

   • Ensure the supply voltage is within the range of 4.5 V to 40 V to avoid damage to the device.

2. Continuous Drain Current (I_D):

   • The device can handle a continuous drain current of up to 2.5 A. Exceeding this value may cause overheating or damage.

3. Peak Pulse Current (I_DM):

   • The peak pulse current can be as high as 6.0 A for short durations (t_p = 10 ms) with a duty cycle of ≤ 1%.

4. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage ranges from 1.0 V to 2.5 V. Ensure the gate-source voltage is above this range to fully turn on the MOSFET.

5. On-State Resistance (R_DS(on)):

   • The on-state resistance is typically 0.045 Ω at a gate-source voltage of 4.5 V and a drain current of 2.5 A. This value can affect power dissipation and efficiency.

6. Capacitances:

   • Input capacitance (C_iss) is 1200 pF, output capacitance (C_oss) is 40 pF, and reverse transfer capacitance (C_rss) is 25 pF. These values are important for high-frequency applications.

7. Total Power Dissipation (P_TOT):

   • The total power dissipation should not exceed 2.0 W at an ambient temperature of 25°C. Proper heat sinking may be required for higher power applications.

8. Junction Temperature (T_J):

   • The maximum junction temperature is 150°C. Ensure adequate cooling to prevent the device from exceeding this temperature.

9. Storage Temperature (T_STG):

   • The device can be stored between -40°C and 150°C. Avoid exposing the device to temperatures outside this range.

10. Handling Precautions:

    • Handle the device with care to avoid static discharge, which can damage the sensitive components.
    • Follow proper soldering techniques to ensure reliable connections and prevent thermal stress.

11. Mounting:

    • Mount the device on a suitable PCB with adequate copper area for heat dissipation.
    • Use appropriate thermal management techniques such as heatsinks or cooling fans if necessary.

12. Testing:

    • Test the device under controlled conditions to ensure it meets the specified parameters before integrating it into your application.

(For reference only)