Details

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BUY W12NK90Z https://www.utsource.net/itm/p/11603767.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Breakdown Voltage	V(BR)	-	-	90	V
Maximum Drain Current	ID(MAX)	-	1.5	-	A	@ VDS = 30V, Tc = 25掳C
Power Dissipation	PD	-	-	65	W	@ Tc = 25掳C
Junction Temperature	TJ	-40	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
Gate-Source Voltage	VGS	-20	-	20	V
Input Capacitance	Ciss	-	1300	-	pF	@ VDS = 30V, f = 1 MHz
Output Capacitance	Coss	-	370	-	pF	@ VDS = 30V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	280	-	pF	@ VDS = 30V, f = 1 MHz
On-State Resistance	RDS(on)	-	0.18	-	惟	@ VGS = 10V, ID = 1.5A

Instructions:

1. Handling and Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Handle with care to avoid mechanical damage.

2. Mounting:

   • Ensure proper heat sinking for efficient thermal management.
   • Use recommended PCB layout guidelines to minimize parasitic inductances and capacitances.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Ensure the junction temperature (TJ) does not exceed 150掳C to prevent thermal runaway.

4. Gate Drive:

   • Apply a gate-source voltage (VGS) within the specified range to ensure reliable operation.
   • Use a gate resistor to control the switching speed and reduce EMI.

5. Testing:

   • Perform initial testing at room temperature to verify functionality.
   • Conduct thermal cycling tests to ensure long-term reliability.

6. Safety:

   • Follow all relevant safety standards and guidelines when handling high-voltage components.
   • Use appropriate protective equipment when working with live circuits.

(For reference only)