Details

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BUY IXFH24N90P https://www.utsource.net/itm/p/11603784.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	900	V	-
Gate-Source Voltage	VGS	-15	-	20	V	-
Continuous Drain Current	ID	-	24	-	A	TC = 25掳C
Pulse Drain Current	IDpeak	-	72	-	A	tp = 10 渭s, IG = 3 A
Power Dissipation	PTOT	-	-	180	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-
Thermal Resistance (Junction to Case)	RthJC	-	0.46	-	掳C/W	-
Input Capacitance	Ciss	-	2200	-	pF	VDS = 450 V, f = 1 MHz
Output Capacitance	Coss	-	110	-	pF	VDS = 450 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	380	-	pF	VDS = 450 V, f = 1 MHz
Gate Charge	QG	-	70	-	nC	VGS = 15 V, ID = 15 A
Turn-on Delay Time	td(on)	-	25	-	ns	VGS = 15 V, ID = 15 A, RG = 2 惟
Rise Time	tr	-	35	-	ns	VGS = 15 V, ID = 15 A, RG = 2 惟
Turn-off Delay Time	td(off)	-	25	-	ns	VGS = 15 V, ID = 15 A, RG = 2 惟
Fall Time	tf	-	35	-	ns	VGS = 15 V, ID = 15 A, RG = 2 惟

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage to the leads and body.
   • Use appropriate ESD protection to prevent damage from static electricity.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within safe limits.
   • Use a thermal interface material (TIM) between the device and the heatsink to improve thermal performance.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified range to ensure reliable operation.
   • Avoid exceeding the maximum gate-source voltage to prevent gate oxide breakdown.

4. Current Handling:

   • Do not exceed the continuous drain current (I_D) or pulse drain current (I_Dpeak) ratings.
   • For pulse applications, ensure that the pulse duration and frequency are within the specified limits.

5. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed the maximum rating.
   • Use the thermal resistance (R_thJC) to calculate the required heatsink size and cooling method.

6. Capacitance Considerations:

   • Account for the input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) in circuit design to optimize performance and minimize switching losses.

7. Gate Drive:

   • Use a gate resistor (R_G) to control the turn-on and turn-off times, which can help reduce switching losses and electromagnetic interference (EMI).

8. Storage:

   • Store the device in a dry, cool place within the specified storage temperature range to prevent damage.

By following these guidelines, you can ensure the reliable and efficient operation of the IXFH24N90P MOSFET.

(For reference only)