Details

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BUY IXFP22N65X2M https://www.utsource.net/itm/p/11603792.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE(off)	-	-	650	V
Gate-Source Voltage	VGS	-15	-	20	V
Continuous Drain Current	ID(on)	-	22	-	A	@ TC = 25掳C
Pulse Drain Current	IDM	-	88	-	A	tp = 10 渭s, IG = 10 A
Power Dissipation	PTOT	-	-	470	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Thermal Resistance	R胃JC	-	0.7	-	掳C/W
On-State Resistance	RDS(on)	-	0.16	-	惟	@ VGS = 15 V, ID = 22 A
Turn-On Delay Time	td(on)	-	43	-	ns	@ ID = 10 A, VGS = 15 V, RG = 3 惟
Rise Time	tr	-	49	-	ns	@ ID = 10 A, VGS = 15 V, RG = 3 惟
Turn-Off Delay Time	td(off)	-	35	-	ns	@ ID = 10 A, VGS = 15 V, RG = 3 惟
Fall Time	tf	-	54	-	ns	@ ID = 10 A, VGS = 15 V, RG = 3 惟

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid static damage.
   • Use appropriate thermal management techniques to keep the junction temperature within safe limits.

2. Electrical Connections:

   • Connect the gate and source pins carefully to avoid short circuits.
   • Use a gate resistor (R_G) to control switching times and reduce EMI.

3. Thermal Management:

   • Mount the device on a suitable heat sink to manage power dissipation effectively.
   • Ensure adequate airflow or cooling to maintain the junction temperature below 150掳C.

4. Operating Conditions:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Operate within the specified temperature range to ensure reliable performance.

5. Testing and Validation:

   • Perform thorough testing under actual operating conditions to validate the performance and reliability of the device.
   • Use appropriate test equipment to measure parameters such as on-state resistance and switching times.

6. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Follow recommended storage practices to maintain the integrity of the device.

(For reference only)