H11L1 DIP6 H11L1M
Specifications
SKU
11603799
Details
BUY H11L1 DIP6 H11L1M https://www.utsource.net/itm/p/11603799.html
| Parameter | Description | Value |
|---|---|---|
| Package Type | Housing Style | DIP-6 |
| Input Device | Type | Photodiode |
| Output Device | Type | Phototransistor (NPN) |
| Isolation Voltage | VIO | 5300 VRMS |
| Forward Current | IF | 20 mA (Max) |
| Peak Forward Surge Current | IFSM | 1 A (10 ms, single pulse) |
| Reverse Voltage | VRR | 5 V (Max) |
| Collector-Emitter Voltage | VCEO | 30 V (Max) |
| Collector Current | IC | 100 mA (Max) |
| Operating Temperature | TA | -40掳C to 85掳C |
| Storage Temperature | TSTG | -40掳C to 125掳C |
| CTR (Current Transfer Ratio) | Min to Max | 20% to 400% |
| Response Time | tr and tf | 10 渭s (Typ) |
| Power Dissipation | PD | 150 mW (Max) |
Instructions for Use:
Mounting:
- Ensure the device is mounted on a PCB with proper clearance to avoid short circuits.
- Follow the recommended footprint and soldering profile for DIP-6 packages.
Electrical Connections:
- Connect the photodiode (input side) to the appropriate drive circuit, ensuring the forward current does not exceed 20 mA.
- Connect the phototransistor (output side) to the load circuit, ensuring the collector-emitter voltage and collector current do not exceed their maximum ratings.
Isolation:
- The device provides electrical isolation up to 5300 VRMS. Ensure that the input and output circuits are designed to maintain this isolation.
Temperature Considerations:
- Operate the device within the specified temperature range (-40掳C to 85掳C) to ensure reliable performance.
- Store the device in an environment within the storage temperature range (-40掳C to 125掳C).
CTR (Current Transfer Ratio):
- The CTR can vary widely (20% to 400%). Design the circuit to accommodate this range for consistent operation.
Response Time:
- The typical response time is 10 渭s. Ensure the application can handle this delay if high-speed switching is required.
Power Dissipation:
- Do not exceed the maximum power dissipation of 150 mW to prevent overheating and potential damage to the device.
Handling:
- Handle the device with care to avoid mechanical stress or damage to the leads.
- Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
View more about H11L1 DIP6 H11L1M on main site
