Details

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BUY IXTP80N10T https://www.utsource.net/itm/p/11606925.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	80	-	m惟	VGS = 10V, ID = 20A
Continuous Drain Current	ID	-	-	80	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	-	240	A	tp = 10ms, IHM = 1/3 ID(p), TC = 25掳C
Gate-Source Voltage	VGS	-20	-	20	V
Drain-Source Breakdown Voltage	VDS(BR)	-	-	100	V	ID = 250渭A
Gate-Source Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 250渭A
Total Power Dissipation	PTOT	-	-	150	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is mounted on a suitable heatsink to maintain the junction temperature within the specified limits.
   • Handle the device with care to avoid mechanical damage or static discharge.

2. Biasing and Operation:

   • Apply the gate-source voltage (V_GS) within the specified range to ensure proper operation.
   • Do not exceed the maximum drain-source voltage (V_DS(BR)) to prevent breakdown.
   • Ensure that the continuous drain current (I_D) does not exceed the rated value to avoid overheating.

3. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it remains below 150掳C.
   • Use thermal paste or a thermal interface material between the device and the heatsink to improve heat transfer.

4. Pulse Operation:

   • For pulse operation, ensure that the pulse duration (t_p) and the peak current (I_D(p)) are within the specified limits to avoid damage.

5. Storage:

   • Store the device in a dry environment within the storage temperature range (-55掳C to 150掳C).

6. Electrostatic Discharge (ESD) Protection:

   • Use ESD protection measures when handling the device to prevent damage from static electricity.

7. Soldering:

   • Follow recommended soldering profiles to avoid thermal shock and ensure good solder joints.

(For reference only)