Details

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BUY 2SK1573 https://www.utsource.net/itm/p/11606950.html

Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDS	卤400	V
Gate-Source Voltage	VGS	卤20	V
Continuous Drain Current	ID	8	A
Pulse Drain Current (t = 10 ms)	ID(p)	20	A
Power Dissipation	PT	100	W
Junction Temperature	TJ	-55 to +150	掳C
Storage Temperature	TSTG	-55 to +150	掳C
Thermal Resistance, Junction to Case	R胃JC	1.5	掳C/W

Instructions for Use:

1. Handling:

   • Handle the 2SK1573 with care to avoid damage to the leads or the die.
   • Use proper ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.

2. Mounting:

   • Ensure that the mounting surface is clean and flat to ensure good thermal contact.
   • Apply a suitable thermal compound between the device and the heat sink to improve thermal conductivity.

3. Biasing:

   • Apply the gate voltage (V_GS) carefully to avoid exceeding the maximum ratings.
   • Use a current-limiting resistor in series with the gate to protect against transient voltages.

4. Operation:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Monitor the junction temperature to avoid overheating, which can lead to device failure.

5. Testing:

   • Use appropriate test equipment and procedures to measure the device parameters.
   • Ensure that the test conditions do not exceed the maximum ratings of the device.

6. Storage:

   • Store the 2SK1573 in a dry, cool place away from direct sunlight and corrosive environments.
   • Follow recommended storage practices to maintain the integrity of the device.

(For reference only)