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BUY G40N60D https://www.utsource.net/itm/p/11609465.html

Description: This is a N-channel, insulated gate bipolar transistor (IGBT) with a maximum collector current of 40A. It has a maximum collector-emitter voltage of 600V and a maximum gate-emitter voltage of 20V. Features: Low on-state resistance Low gate charge High speed switching Low forward voltage drop High current handling capability Applications: Motor control Switching power supplies Uninterruptible power supplies Automotive applications Lighting systems (For reference only)