Details

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BUY STGB19NC60KD https://www.utsource.net/itm/p/11609769.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	600	V	IC = 0, Tj = 25掳C
Collector-Base Voltage	VCBO	-	-	600	V	IB = 0, Tj = 25掳C
Emitter-Base Voltage	VEBO	-	-	7	V	IE = 1 mA, Tj = 25掳C
Continuous Collector Current	IC	-	-	19	A	TC = 25掳C
Continuous Collector Current (TC = 100掳C)	IC(TC = 100掳C)	-	-	13	A	TC = 100掳C
Maximum Power Dissipation	PTOT	-	-	180	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature Range	TSTG	-40	-	150	掳C	-
Thermal Resistance, Junction to Case	RthJC	-	-	0.5	K/W	-
Total Gate Charge	QG	-	120	-	nC	VGE = 卤15 V, IC = 10 A, Tj = 25掳C
Turn-On Delay Time	td(on)	-	35	-	ns	VGE = 15 V, IC = 10 A, Tj = 25掳C
Rise Time	tr	-	35	-	ns	VGE = 15 V, IC = 10 A, Tj = 25掳C
Turn-Off Delay Time	td(off)	-	45	-	ns	VGE = -15 V, IC = 10 A, Tj = 25掳C
Fall Time	tf	-	45	-	ns	VGE = -15 V, IC = 10 A, Tj = 25掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is mounted on a heatsink with adequate thermal conductivity to maintain the junction temperature within safe limits.
   • Use proper handling techniques to avoid static discharge and mechanical stress.

2. Biasing:

   • Apply the appropriate gate voltage (V_GE) to ensure proper turn-on and turn-off of the transistor.
   • Ensure that the gate-source voltage (V_GS) does not exceed the maximum ratings to prevent damage.

3. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.
   • Use thermal paste or a thermal interface material between the device and the heatsink to improve heat dissipation.

4. Current Limiting:

   • Implement current limiting circuits to protect the device from overcurrent conditions.
   • Ensure that the continuous collector current (I_C) does not exceed the maximum ratings, especially at higher temperatures.

5. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Avoid exposing the device to extreme temperatures outside the storage temperature range (-40掳C to 150掳C).

6. Testing:

   • Use appropriate test equipment and methods to verify the device parameters.
   • Follow the recommended test conditions specified in the datasheet to obtain accurate results.

7. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Ensure that the device is properly insulated and isolated to prevent electrical shock.

For detailed information, refer to the official datasheet provided by STMicroelectronics.

(For reference only)