Details

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BUY STP10NK60ZFP P10NK60ZFP MOS 10A600V TO220 https://www.utsource.net/itm/p/11611980.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDSS	-	-	600	V	-
Gate-Source Voltage	VGSS	-15	-	15	V	-
Continuous Drain Current	ID	-	10	-	A	TC = 25掳C
Continuous Drain Current	ID	-	4.8	-	A	TC = 100掳C
Pulse Drain Current	IDM	-	30	-	A	tp = 10 ms, IGT = 2 A
Power Dissipation	PTOT	-	-	150	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-
Thermal Resistance	R胃JC	-	1.5	-	掳C/W	-

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage thermal resistance.
   • Handle with care to avoid damage to the leads and body.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use appropriate wire gauges to handle the current ratings.

3. Gate Drive:

   • Apply a gate voltage within the specified range to turn the MOSFET on and off.
   • Ensure the gate drive circuitry is capable of providing sufficient current to charge and discharge the gate capacitance quickly.

4. Thermal Management:

   • Monitor the junction temperature to ensure it does not exceed 175掳C.
   • Use a heatsink or cooling solution if necessary to maintain safe operating temperatures.

5. Overvoltage Protection:

   • Implement overvoltage protection circuits to prevent damage from voltage spikes.
   • Consider using snubber circuits to reduce voltage transients.

6. Storage and Operating Environment:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Operate within the specified temperature range to ensure reliable performance.

7. Testing:

   • Perform initial testing at lower currents and voltages to verify proper operation.
   • Gradually increase the load to the rated values while monitoring performance and temperature.

8. Compliance:

   • Ensure the device complies with all relevant safety and regulatory standards for your application.

(For reference only)