Details

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BUY 5N52U https://www.utsource.net/itm/p/11614631.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	V(BR)		5.1		V	Breakdown voltage at specified test current
Test Current	IT		5		mA	Current at which breakdown voltage is measured
Zener Impedance	Zz		20		Ω	Dynamic impedance at test current
Maximum Power Dissipation	Ptot		500		mW	Maximum power dissipation
Operating Junction Temperature	TJ	-55		150	°C	Range of operating junction temperature
Storage Temperature	Tstg	-65		150	°C	Range of storage temperature

Instructions for Use:

1. Handling Care: Handle the 5N52U diode with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
2. Mounting: Ensure proper mounting and soldering techniques are used to prevent thermal and mechanical stresses on the device.
3. Power Dissipation: Do not exceed the maximum power dissipation rating. Ensure adequate heat sinking if operating near maximum power levels.
4. Temperature Considerations: Operate within the specified junction and storage temperature ranges to ensure reliable performance and longevity.
5. Voltage Regulation: The 5N52U is designed for voltage regulation applications. Ensure the operating conditions (voltage, current) match the specifications for optimal performance.
6. Testing: When testing the device, use the specified test current to measure the breakdown voltage accurately.

(For reference only)