Details

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BUY IPD50R380CE https://www.utsource.net/itm/p/11614634.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions/Notes
Drain-Source On-State Resistance	RDS(on)	-	380	-	mΩ	VGS = 10V, TJ = 25°C
Gate-Source Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 250μA, TJ = 25°C
Maximum Drain Current	ID	-	-	50	A	Pulse, TC = 25°C, tp ≤ 10ms, IG = 5A
Continuous Drain Current	ID(DC)	-	-	25	A	TC = 25°C
Power Dissipation	PTOT	-	-	175	W	TC = 25°C
Junction Temperature	TJ	-	-	175	°C	Maximum operating temperature
Storage Temperature	TSTG	-55	-	150	°C	Storage and handling temperature range
Gate Charge	QG	-	65	-	nC	VGS = 10V, ID = 25A
Input Capacitance	Ciss	-	1700	-	pF	VDS = 100V, f = 1MHz
Output Capacitance	Coss	-	100	-	pF	VDS = 100V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	150	-	pF	VDS = 100V, f = 1MHz

Instructions for Use:

1. Thermal Management:

   • Ensure adequate heat sinking to keep the junction temperature below the maximum limit (175°C).
   • For continuous operation, consider the power dissipation and thermal resistance of the heatsink.

2. Gate Drive:

   • Use a gate driver with sufficient current capability to switch the device quickly.
   • Ensure the gate voltage is within the specified range to avoid damage or improper operation.

3. Overcurrent Protection:

   • Implement overcurrent protection to prevent damage from excessive drain current.
   • Monitor the drain current and use a current-limiting circuit if necessary.

4. Storage and Handling:

   • Store the device in a dry, cool environment within the specified storage temperature range.
   • Handle the device with care to avoid mechanical stress and electrostatic discharge (ESD).

5. Mounting:

   • Follow recommended mounting procedures to ensure good thermal and electrical contact.
   • Use appropriate torque values for screws and bolts to avoid damaging the device.

6. Pulse Operation:

   • When operating in pulse mode, ensure that the pulse duration and frequency do not exceed the specified limits to avoid overheating.

7. Electrical Isolation:

   • Ensure proper isolation between the high-voltage and low-voltage circuits to prevent electrical shock and system failures.

By following these guidelines, you can ensure reliable and efficient operation of the IPD50R380CE MOSFET.

(For reference only)