Details

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BUY 20N60CFD https://www.utsource.net/itm/p/11614636.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	-	600	-	V
Collector-Base Voltage	VCBO	-	650	-	V
Emitter-Base Voltage	VEBO	-	7	-	V
Continuous Collector Current	IC	-	20	-	A
Continuous Collector Dissipation	PC	-	180	-	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Base-Emitter Saturation Voltage	VBE(sat)	1.4	1.8	2.2	V
Collector-Emitter Saturation Voltage	VCE(sat)	1.0	1.5	2.0	V
Turn-On Time	ton	-	0.3	0.5	渭s
Turn-Off Time	toff	-	1.0	1.5	渭s

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Handle with care to avoid mechanical damage.

2. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly.
   • Use appropriate wire gauges to handle the rated currents.

3. Thermal Management:

   • Ensure adequate cooling to prevent overheating, especially under high power conditions.
   • Monitor the junction temperature to avoid exceeding the maximum limit of 150掳C.

4. Operational Conditions:

   • Operate within the specified voltage and current ratings to ensure reliable performance.
   • Avoid exceeding the maximum storage temperature to prevent damage.

5. Storage:

   • Store in a dry, cool environment to prevent moisture damage.
   • Keep away from direct sunlight and sources of heat.

6. Testing:

   • Perform initial testing at low power levels to verify correct operation.
   • Use appropriate test equipment and follow safety guidelines.

7. Safety Precautions:

   • Always disconnect power before making any connections or adjustments.
   • Use insulated tools to avoid short circuits and electric shock.

By following these instructions, you can ensure optimal performance and longevity of the 20N60CFD transistor.

(For reference only)