Details

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BUY IRGP4750DPBF https://www.utsource.net/itm/p/11616343.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V CES	Continuous	-	600	-	V
Collector Current	I C	Pulse	-	-	140	A
Power Dissipation	P T	Ta = 25°C	-	-	200	W
Junction Temperature	T J	Operating	-	-	175	°C
Storage Temperature	T STG	-	-55	-	150	°C
Gate Charge	Q G	V GE = ±15V, I C = 10A	-	130	-	nC
Turn-on Delay Time	t d(on)	V GE = +15V, R G = 3Ω, I C = 50A	-	78	-	ns
Rise Time	t r	V GE = +15V, R G = 3Ω, I C = 50A	-	59	-	ns
Turn-off Delay Time	t d(off)	V GE = -10V, R G = 3Ω, I C = 50A	-	75	-	ns
Fall Time	t f	V GE = -10V, R G = 3Ω, I C = 50A	-	62	-	ns

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the specified storage temperature range.
   • Handle with care to prevent damage from electrostatic discharge (ESD).

2. Mounting and Assembly:

   • Ensure proper thermal management to keep the junction temperature within operational limits.
   • Follow manufacturer guidelines for soldering and mounting procedures.

3. Electrical Connections:

   • Verify that gate drive circuits provide appropriate voltages to avoid overstressing the gate-source junction.
   • Use suitable gate resistors to control switching times and minimize switching losses.

4. Operational Guidelines:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Regularly monitor device performance parameters such as temperature and current to ensure reliable operation.

5. Testing and Validation:

   • Perform initial testing under controlled conditions to validate design parameters.
   • Conduct periodic checks to ensure ongoing compliance with specifications.

(For reference only)