Details

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Parameter	Value
Part Number	RFP50N06
Type	MOSFET
Package	TO-220
VDSS	60V
ID	50A (at 25掳C)
RDS(on)	0.018惟 (max at 25掳C, VGS=10V)
Power Dissipation	115W (at 25掳C, derated above 25掳C)
Operating Temperature	-55掳C to +150掳C
Storage Temperature	-65掳C to +175掳C
Gate Charge	43nC (typical)
Input Capacitance	1240pF (typical)
Output Capacitance	590pF (typical)
Reverse Transfer Capacitance	300pF (typical)
VGS(th)	2V to 4V (gate threshold voltage)
Continuous Drain Current	50A (at 25掳C, derated above 25掳C)
Pulse Drain Current	150A (tp=10ms, IDM)
Lead Finish	Tin

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage power dissipation.
   • Handle with care to avoid damage to the leads and package.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use appropriate wire gauges to handle the current ratings.

3. Thermal Management:

   • The device can dissipate up to 115W at 25掳C ambient temperature. Use a heatsink to maintain the junction temperature within safe limits.
   • Derate the power dissipation linearly above 25掳C.

4. Gate Drive:

   • Apply a gate-source voltage (V_GS) of at least 10V to fully turn on the MOSFET.
   • Ensure the gate drive circuit has low impedance to minimize switching losses.

5. Storage and Handling:

   • Store in a dry, cool place to prevent moisture damage.
   • Follow ESD (Electrostatic Discharge) precautions to avoid damaging the MOSFET.

6. Testing:

   • Use a multimeter or an oscilloscope to verify the correct operation of the MOSFET.
   • Test the device under controlled conditions to ensure it meets the specified parameters.

7. Safety:

   • Always follow safety guidelines when working with high currents and voltages.
   • Use protective equipment such as gloves and safety glasses.

By following these instructions, you can ensure optimal performance and longevity of the RFP50N06 MOSFET.

(For reference only)