Details

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Parameter	Value
Part Number	FGH60N60SFD
Type	MOSFET
Brand	Fairchild (ON Semiconductor)
Package	TO-220
VDS (Max Drain-Source Voltage)	600 V
RDS(on) (On-State Resistance)	0.60 惟 @ 25掳C, 10 V VGS
ID (Continuous Drain Current)	6.0 A @ 25掳C, 3.6 A @ 75掳C
Power Dissipation (PD)	118 W @ 25掳C, 45 W @ 75掳C
Operating Temperature (TJ)	-55掳C to +150掳C
Storage Temperature (TSTG)	-65掳C to +150掳C
Gate Charge (Qg)	60 nC
Input Capacitance (Ciss)	2000 pF
Output Capacitance (Coss)	550 pF
Reverse Transfer Capacitance (Crss)	400 pF
Total Gate-to-Source Charge (Qgs)	20 nC
Total Gate-to-Drain Charge (Qgd)	40 nC
Thermal Resistance (R胃JC)	1.75掳C/W

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain operating temperatures within specified limits.
   • Use a thermal compound between the MOSFET and the heatsink for better thermal conductivity.

2. Electrical Connections:

   • Connect the Drain (D), Source (S), and Gate (G) terminals correctly.
   • Use short, low-inductance leads to minimize parasitic inductances.

3. Biasing:

   • Apply a gate voltage (VGS) of at least 10 V to fully turn on the MOSFET.
   • Ensure the gate voltage does not exceed the maximum rating to avoid damage.

4. Protection:

   • Use appropriate overvoltage and overcurrent protection circuits.
   • Consider using a gate resistor to limit the rate of rise of the gate voltage (dV/dt).

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Handle with care to avoid mechanical damage and static discharge.

6. Testing:

   • Test the device in a controlled environment to ensure it meets the specified parameters.
   • Use a multimeter or an oscilloscope to verify the correct operation of the MOSFET.

7. Safety:

   • Always follow safe handling practices when working with high voltages and currents.
   • Use protective equipment such as gloves and safety glasses when necessary.

For detailed application notes and further information, refer to the datasheet provided by ON Semiconductor.

(For reference only)