Details

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Parameter	Value
Part Number	FMH23N50E
Type	MOSFET
Polarity	N-Channel
Voltage (Vds)	50V
Current (Id)	23A
Rds(on) @ 10V	6.5 m惟
Power Dissipation	110W
Package	TO-220
Operating Temperature	-55掳C to +150掳C
Gate Charge (Qg)	47 nC
Input Capacitance (Ciss)	1680 pF at Vds = 0V, f = 1 MHz
Output Capacitance (Coss)	290 pF at Vds = 0V, f = 1 MHz
Reverse Transfer Capacitance (Crss)	120 pF at Vds = 0V, f = 1 MHz
Thermal Resistance (Rth(j-c))	1.58掳C/W
Storage Temperature	-65掳C to +150掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid touching the gate terminal directly to prevent electrostatic discharge (ESD).
   • Use proper ESD protection equipment when handling the device.

2. Mounting:

   • Ensure the heatsink is properly attached to the TO-220 package to dissipate heat effectively.
   • Use thermal paste between the device and the heatsink to improve thermal conductivity.

3. Biasing:

   • Apply a gate-source voltage (Vgs) within the recommended range to ensure proper operation.
   • For optimal performance, use a gate resistor to limit current and reduce ringing.

4. Protection:

   • Implement overvoltage and overcurrent protection circuits to safeguard the MOSFET.
   • Use TVS diodes or Zener diodes to protect against voltage spikes.

5. Testing:

   • Before final assembly, test the MOSFET with a multimeter to ensure it is not damaged.
   • Perform functional tests under controlled conditions to verify performance.

6. Storage:

   • Store the MOSFET in a dry, cool place away from direct sunlight.
   • Keep the device in its original packaging until ready for use to prevent damage.

7. Soldering:

   • Use a temperature-controlled soldering iron and follow the recommended soldering profile.
   • Avoid overheating the device during soldering to prevent thermal damage.

8. Documentation:

   • Refer to the datasheet for detailed electrical and mechanical specifications.
   • Consult application notes for specific circuit design guidelines.

(For reference only)