Details

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BUY FGH40N60UFD ORIGINAL GOODS IN STOCK https://www.utsource.net/itm/p/11617203.html

Parameter	Description	Value
Part Number		FGH40N60UFD
Manufacturer		Fairchild Semiconductor
Type		N-Channel MOSFET
Package		TO-220
VDS (Max)	Drain-to-Source Voltage	600 V
VGS (Max)	Gate-to-Source Voltage	卤20 V
ID (Max)	Continuous Drain Current	40 A
RDS(on) (Max)	On-State Resistance	0.18 惟 at VGS = 10 V
Power Dissipation	Maximum Power Dissipation	150 W
Operating Temperature	Junction Temperature Range	-55掳C to +150掳C
Storage Temperature	Storage Temperature Range	-65掳C to +175掳C
Total Gate Charge	Total Gate Charge	120 nC
Input Capacitance	Input Capacitance	1950 pF
Output Capacitance	Output Capacitance	500 pF
Reverse Transfer Capacitance	Reverse Transfer Capacitance	330 pF
Thermal Resistance	Junction to Case	1.5掳C/W
Thermal Resistance	Junction to Ambient	62.5掳C/W

Instructions for Use:

1. Handling Precautions:

   • ESD Protection: The FGH40N60UFD is sensitive to electrostatic discharge (ESD). Always use proper ESD protection equipment when handling the device.
   • Polarity: Ensure correct polarity when connecting the device. Connecting the device in reverse can cause immediate damage.

2. Mounting:

   • Heat Sinking: For high power applications, ensure adequate heat sinking to maintain the junction temperature within the specified range.
   • Torque Specifications: Follow the recommended torque specifications for screw terminals to avoid mechanical stress on the device.

3. Operation:

   • Gate Drive: Apply a gate voltage (VGS) between 10 V and 15 V for optimal performance. Avoid exceeding the maximum VGS rating.
   • Overcurrent Protection: Implement overcurrent protection to prevent damage from excessive drain current.
   • Thermal Management: Monitor the device temperature and ensure it does not exceed the maximum operating temperature.

4. Storage:

   • Humidity Control: Store the device in a dry environment to prevent moisture-related issues.
   • Temperature Range: Store the device within the specified storage temperature range to avoid thermal stress.

5. Testing:

   • Initial Testing: Perform initial testing under controlled conditions to verify the device parameters.
   • Periodic Testing: Conduct periodic testing to ensure the device remains within its operational parameters.

For more detailed information, refer to the datasheet provided by Fairchild Semiconductor.

(For reference only)