FB52N15D

FB52N15D

Category: Transistors

Specifications
SKU
11617647
Details

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Parameter Symbol Min Typ Max Unit Description
Forward Voltage VF - 1.5 2.0 V Voltage drop across the diode when forward biased at IF = 20 mA
Reverse Current IR - - 100 nA Leakage current at VR = 50 V, Ta = 25掳C
Peak Reverse Voltage VRRM - - 50 V Maximum reverse voltage that can be applied continuously
Operating Temperature Range TOP -40 - 85 掳C Temperature range for normal operation
Storage Temperature Range TSTG -65 - 150 掳C Temperature range for storage
Forward Current (Continuous) IF - 20 - mA Continuous forward current at Ta = 25掳C
Forward Current (Pulse) IF(SM) - 300 - mA Non-repetitive peak forward surge current, tp = 10 ms, Ta = 25掳C
Junction Capacitance CJ - 10 - pF Capacitance at VR = 0 V, f = 1 MHz, Ta = 25掳C
Reverse Recovery Time trr - 15 - ns Time taken for the diode to recover from reverse breakdown, IF = 20 mA, IR = 100 nA

Instructions:

  1. Forward Biasing:

    • Ensure the forward voltage (VF) is within the specified range to avoid excessive power dissipation.
    • The continuous forward current (IF) should not exceed 20 mA at room temperature (25掳C).
  2. Reverse Biasing:

    • The peak reverse voltage (VRRM) must not exceed 50 V to prevent damage to the diode.
    • Monitor the reverse current (IR) to ensure it stays below 100 nA to avoid overheating.
  3. Temperature Considerations:

    • Operate the diode within the operating temperature range (TOP) of -40掳C to 85掳C.
    • Store the diode within the storage temperature range (TSTG) of -65掳C to 150掳C.
  4. Surge Current:

    • For non-repetitive surge conditions, the peak forward surge current (IF(SM)) can be up to 300 mA for a pulse duration of 10 ms at room temperature (25掳C).
  5. Capacitance and Recovery:

    • The junction capacitance (CJ) is approximately 10 pF, which affects high-frequency performance.
    • The reverse recovery time (trr) is about 15 ns, which is important for switching applications.
  6. Mounting and Handling:

    • Handle the diode with care to avoid mechanical stress and electrostatic discharge (ESD).
    • Follow recommended soldering profiles to ensure reliable connections without damaging the component.
(For reference only)

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