Details

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BUY IRG4PF50WD https://www.utsource.net/itm/p/11649537.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	500	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	16	-	A	TC = 25°C
Pulse Drain Current	ID(peak)	-	48	-	A	TC = 25°C, tp = 10 μs, fr ≤ 100 Hz
Total Power Dissipation	PTOT	-	120	-	W	TC = 25°C
Junction Temperature	TJ	-	-	175	°C
Storage Temperature	TSTG	-65	-	150	°C
Thermal Resistance, Junction to Case	RθJC	-	0.39	-	°C/W

Instructions for Use:

1. Handling Precautions:

   • The IRG4PF50WD is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
   • Avoid applying voltages or currents beyond the specified limits to prevent damage.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within safe operating limits.
   • Use thermal grease between the device and the heat sink to improve thermal conductivity.

3. Gate Drive:

   • Apply a gate voltage (V_GS) within the recommended range to ensure reliable operation.
   • Ensure the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly.

4. Drain-Source Voltage (V_DS):

   • Do not exceed the maximum drain-source voltage (500V) to avoid breakdown.

5. Continuous Drain Current (I_D):

   • The continuous drain current should not exceed 16A at a case temperature of 25°C. For higher temperatures, derate the current accordingly.

6. Pulse Drain Current (I_D(peak)):

   • The pulse drain current can be up to 48A for short durations (10 μs) at a case temperature of 25°C, with a repetition rate of 100 Hz or less.

7. Total Power Dissipation (P_TOT):

   • The total power dissipation should not exceed 120W at a case temperature of 25°C. Proper cooling is essential to manage heat dissipation.

8. Junction Temperature (T_J):

   • Keep the junction temperature below 175°C to ensure long-term reliability.

9. Storage Temperature (T_STG):

   • Store the device in a dry environment within the temperature range of -65°C to 150°C.

10. Thermal Resistance (R_θJC):

    • The thermal resistance from the junction to the case is 0.39°C/W. Use this value to calculate the required heat sink size for your application.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)