Details

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BUY NAND512W3A2SN6 https://www.utsource.net/itm/p/11658162.html

Parameter	Description	Value
Device Type	NAND Flash Memory	512 Mb (64 MB)
Package	BGA (Ball Grid Array)	169 balls
Operating Voltage	VCC (Supply Voltage)	1.8V 卤 0.1V
Data I/O Voltage	VCCQ (I/O Supply Voltage)	1.8V 卤 0.1V
Data Width	I/O Pins	8 bits
Page Size	Data + Spare Area	2048 + 64 bytes
Block Size	Number of Pages	64 pages/block
Total Blocks	Total Number of Blocks	4096 blocks
Erase Time	Typical Erase Time per Block	2 ms
Program Time	Page Program Time	200 渭s
Read Time	Random Read Access Time	25 ns
Sequential Read	Sequential Read Speed	Up to 40 MB/s
Sequential Write	Sequential Write Speed	Up to 12 MB/s
Endurance	Program/Erase Cycles per Block	100,000 cycles
Retention	Data Retention at 25掳C	10 years
Operating Temperature	Industrial Temperature Range	-40掳C to +85掳C
Storage Temperature	Storage Temperature Range	-55掳C to +125掳C
Package Dimensions	BGA Package Dimensions	12 mm x 14 mm x 1.2 mm
RoHS Compliance	Compliant with RoHS standards	Yes

Instructions for Use

1. Power Supply:

   • Connect VCC to 1.8V 卤 0.1V.
   • Connect VCCQ to 1.8V 卤 0.1V for I/O operations.

2. Initialization:

   • Ensure that the device is powered on before any commands are issued.
   • Initialize the device by sending the appropriate reset command.

3. Addressing:

   • Use the address lines to select the desired page or block.
   • Addressing is done in steps: first the row address (block and page), then the column address (data within the page).

4. Command Sequence:

   • Commands are sent via the I/O pins.
   • Common commands include:
     • Read Page: Sends the read command, followed by the address, and then reads the data.
     • Write Page: Sends the write command, followed by the address, and then writes the data.
     • Erase Block: Sends the erase command, followed by the block address.

5. Error Handling:

   • Check the status register after each operation to ensure success.
   • Handle errors such as bad blocks by remapping them.

6. Data Integrity:

   • Use the spare area for ECC (Error Correction Code) to improve data reliability.
   • Implement wear leveling algorithms to distribute writes evenly across blocks.

7. Temperature Considerations:

   • Ensure that the operating temperature is within the specified range (-40掳C to +85掳C).
   • Store the device in a temperature-controlled environment when not in use.

8. Handling Precautions:

   • Handle the device with care to avoid static damage.
   • Follow ESD (Electrostatic Discharge) precautions during handling and installation.

9. Documentation:

   • Refer to the datasheet and application notes for detailed information and specific implementation details.

(For reference only)