Details

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BUY IRFB4127 https://www.utsource.net/itm/p/11661404.html

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Continuous Drain Current	ID	-	80	-	A	@ TC = 25掳C, VGS = 10V
Pulse Drain Current	IDpeak	-	360	-	A	@ TC = 25掳C, t = 10渭s, Duty Cycle = 1%
Gate-Source Voltage	VGS	-20	-	20	V	-
Drain-Source Breakdown Voltage	BVdss	55	-	60	V	-
RDS(on)	RDS(on)	1.4	-	2.0	m惟	@ VGS = 10V, ID = 80A, TC = 25掳C
Gate Charge	Qg	-	125	-	nC	-
Input Capacitance	Ciss	-	1590	-	pF	@ VDS = 15V, VGS = 0V to 10V, f = 1MHz
Output Capacitance	Coss	-	230	-	pF	@ VDS = 15V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	380	-	pF	@ VDS = 15V, VGS = 0V to 10V, f = 1MHz
Total Power Dissipation	Ptot	-	360	-	W	@ TC = 25掳C
Junction Temperature	TJ	-55	-	175	掳C	-
Storage Temperature	Tstg	-55	-	150	掳C	-

Instructions for Use:

1. Handling and Storage:

   • Store the IRFB4127 in a dry, cool place.
   • Handle with care to avoid damage to the leads and the die.

2. Mounting:

   • Ensure proper heat sinking to manage thermal resistance.
   • Use a suitable heatsink to keep the junction temperature within the specified limits.

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Ensure that the gate-source voltage (VGS) does not exceed the maximum rating of 卤20V.

4. Thermal Management:

   • Monitor the junction temperature (TJ) to ensure it does not exceed 175掳C.
   • Use thermal paste or thermal interface materials between the device and the heatsink for better thermal conductivity.

5. Pulse Operation:

   • For pulse operation, ensure that the pulse width and duty cycle do not exceed the specified limits to avoid overheating.

6. Gate Drive:

   • Provide sufficient gate drive to ensure the MOSFET is fully turned on, reducing RDS(on) and power dissipation.
   • Use a low impedance gate driver to minimize switching losses.

7. Protective Circuits:

   • Consider adding overvoltage and overcurrent protection circuits to safeguard the MOSFET from transient conditions.

8. Testing:

   • Test the device under controlled conditions to verify its performance and reliability.
   • Follow the datasheet recommendations for testing procedures.

By adhering to these guidelines, you can ensure optimal performance and longevity of the IRFB4127 MOSFET.

(For reference only)