TSA20N50M 20N50 N CHANNEL MOSFET TO-3P 500V 20A

TSA20N50M 20N50 N CHANNEL MOSFET TO-3P 500V 20A

Category: Transistors

Specifications
SKU
11661504
Details

BUY TSA20N50M 20N50 N CHANNEL MOSFET TO-3P 500V 20A https://www.utsource.net/itm/p/11661504.html

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 500 V
Continuous Drain Current ID 20 A
Gate-Source Voltage VGS 卤20 V
Gate-Threshold Voltage VGS(th) 2.0 to 4.0 V
RDS(on) at VGS = 10V - 0.75
Total Power Dissipation PTOT 125 W
Junction Temperature TJ -55 to 150 掳C
Storage Temperature TSTG -55 to 150 掳C
Lead Temperature (Soldering, 10s) - 300 掳C

Instructions for Use:

  1. Handling Precautions:

    • ESD Sensitivity: The TSA20N50M is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
    • Gate Protection: Avoid applying voltages greater than 卤20V to the gate relative to the source to prevent damage.
  2. Mounting:

    • Thermal Management: Ensure adequate heat sinking to manage the maximum power dissipation of 125W. Use thermal paste between the device and the heat sink for optimal thermal performance.
    • Mechanical Stress: Avoid excessive mechanical stress on the leads during soldering and assembly. Follow the recommended soldering profile to prevent damage.
  3. Operating Conditions:

    • Junction Temperature: Ensure that the junction temperature does not exceed 150掳C to avoid thermal runaway and potential device failure.
    • Continuous Operation: Do not exceed the continuous drain current of 20A or the drain-source voltage of 500V to prevent overloading the device.
  4. Testing:

    • Initial Testing: Perform initial testing with low currents and voltages to ensure the device is functioning correctly before operating at full ratings.
    • Parameter Verification: Verify key parameters such as RDS(on) and VGS(th) using appropriate test equipment to ensure the device meets specifications.
  5. Storage:

    • Temperature Range: Store the device in a dry environment within the temperature range of -55掳C to 150掳C.
    • Humidity Control: Use desiccant packets or a humidity-controlled environment to prevent moisture absorption, which can lead to corrosion or other issues.
  6. Soldering:

    • Soldering Temperature: Do not exceed a lead temperature of 300掳C for more than 10 seconds during soldering.
    • Cooling: Allow the device to cool naturally after soldering to avoid thermal shock.

By following these guidelines, you can ensure the reliable operation and longevity of the TSA20N50M N-Channel MOSFET.

(For reference only)

View more about TSA20N50M 20N50 N CHANNEL MOSFET TO-3P 500V 20A on main site