Details

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BUY 2SJ553STR-E https://www.utsource.net/itm/p/11661923.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 0, IE = 0	250	-	-	V
Emitter-Collector Breakdown Voltage	V(BR)ECS	IC = 0, IB = 0	18	-	-	V
Collector-Base Breakdown Voltage	V(BR)CBO	IE = 0	250	-	-	V
Continuous Collector Current	IC	TC = 25°C	-	3	5	A
Pulse Collector Current	ICM	t = 1 ms, TC = 25°C	-	6	-	A
DC Current Gain	hFE	IC = 0.1A, VCE = 1V	20	100	400	-
Transition Frequency	fT	IC = 0.1A, VCE = 1V	-	2.5	-	MHz
Storage Temperature Range	TSTG	-	-55	-	150	°C
Operating Junction Temperature	TJ	-	-55	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SJ553STR-E with care to avoid damage to the pins or internal components.
   • Avoid exposure to high temperatures and humidity during storage.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum current and temperature limits.
   • Follow manufacturer guidelines for mounting torque and soldering profiles.

3. Electrical Connections:

   • Verify correct polarity before applying voltage to prevent damage.
   • Use appropriate decoupling capacitors to minimize noise and transient effects.

4. Operating Conditions:

   • Operate within specified temperature and current limits to ensure reliable performance.
   • Monitor junction temperature to prevent overheating.

5. Testing:

   • Perform initial testing at room temperature and gradually increase load conditions.
   • Regularly check device parameters against datasheet specifications.

(For reference only)