Details

---

BUY 60M324 https://www.utsource.net/itm/p/11665535.html

Parameter	Description	Value	Unit
Part Number	Unique identifier for the component	60M324	-
Type	Type of component	MOSFET	-
Package	Encapsulation type	TO-220	-
VDS	Drain-to-Source Voltage	60	V
VGS	Gate-to-Source Voltage	卤20	V
ID	Continuous Drain Current	32	A
PTOT	Total Power Dissipation (at TC = 25掳C)	110	W
RDS(on)	On-State Resistance (VGS = 10V)	5.5	m惟
fT	Transition Frequency	3.5	MHz
QG	Gate Charge	95	nC
QGD	Gate-Drain Charge	28	nC
VGS(th)	Gate Threshold Voltage	2.0 to 4.0	V
TJ	Junction Temperature Range	-55 to 175	掳C
TSTG	Storage Temperature Range	-65 to 150	掳C

Instructions:

1. Handling:

   • Handle with care to avoid damage to the leads and body.
   • Use appropriate ESD protection to prevent damage from static electricity.

2. Mounting:

   • Ensure proper alignment of the component during mounting.
   • Apply thermal paste between the heatsink and the component for better heat dissipation.
   • Torque the screws to the recommended values to ensure good thermal contact without damaging the component.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Ensure that the junction temperature (T_J) remains within the specified range to avoid thermal runaway.
   • Use a heatsink if necessary to keep the temperature within safe limits.

4. Testing:

   • Use a multimeter to check for continuity and resistance values.
   • Perform functional tests under controlled conditions to verify performance.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect from moisture and static.

6. Disposal:

   • Follow local regulations for the disposal of electronic components.
   • Recycle or dispose of the component responsibly.

(For reference only)