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BUY ZXMN6A25GTA https://www.utsource.net/itm/p/11667388.html

N-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance: RDS(ON) = 6.5m惟 (VGS = 10V) - Low Gate Threshold Voltage: VGS(th) = 2.5V (Max) - Low Input Capacitance: Ciss = 35pF (Typ) - High Power Dissipation: PD = 1.2W (Tc = 25掳C) - Fast Switching Speed: tON = 10ns (Typ) - ESD Protection: >2kV (HBM) Applications: - DC/DC Converters - Load Switch - General Purpose Switching Applications (For reference only)