Details

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BUY AT29C040A-12TI https://www.utsource.net/itm/p/11667448.html
IC FLASH 4M PARALLEL 32TSOP

Parameter	Description	Value
Device Type	Flash Memory	-
Density	Storage Capacity	512 K x 8 bits (4 Mbit)
Voltage Range (Vcc)	Operating Voltage	2.7V to 5.5V
Programming Voltage (Vpp)	Programming Voltage	Not Required (Vcc only)
Access Time (tAA)	Access Time	120 ns (max)
Write Cycle Time (tWC)	Write Cycle Time	5 ms (max)
Erase/Program Cycles	Endurance	100,000 cycles (min)
Data Retention	Data Retention	10 years (min)
Package	Package Type	40-pin TQFP (Thin Quad Flat Package)
Operating Temperature Range	Industrial Temperature Range	-40°C to +85°C
Storage Temperature Range	Storage Temperature	-65°C to +150°C
Pin Configuration	Pin Count	40 pins
Standby Current (Icc)	Standby Current	1 μA (max) at 5V, 25°C
Active Current (Icc)	Active Current	30 mA (max) at 5V, 25°C

Instructions for Use:

1. Power Supply:

   • Connect Vcc to the positive power supply (2.7V to 5.5V).
   • Connect Vss to ground.

2. Address Lines:

   • Connect the address lines (A0-A18) to the microcontroller or memory controller to select the desired memory location.

3. Data Lines:

   • Connect the data lines (D0-D7) to the microcontroller or memory controller for data transfer.

4. Control Signals:

   • OE (Output Enable): Low to enable read operations.
   • WE (Write Enable): Low to enable write operations.
   • CE (Chip Enable): Low to select the device.

5. Programming:

   • The device supports byte, page, and sector programming.
   • Ensure the correct sequence of control signals and timing for successful programming.

6. Erase:

   • The device supports sector and chip erase operations.
   • Sector erase erases 64 Kbytes of memory.
   • Chip erase erases the entire memory array.

7. Timing Considerations:

   • Ensure that the access time (tAA) and write cycle time (tWC) are respected to avoid data corruption.
   • Refer to the device datasheet for detailed timing diagrams and specifications.

8. Handling:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Store the device in a dry environment to prevent moisture damage.

9. Testing:

   • After programming, verify the contents of the memory using a memory tester or by reading back the programmed data.

10. Documentation:

    • Refer to the AT29C040A-12TI datasheet for detailed information on pinout, timing, and advanced features.

(For reference only)