Details

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BUY ADVFC32KN https://www.utsource.net/itm/p/11682800.html
IC CONV V/F F/V 0-70DEGC 14-DIP

Parameter	Description	Value
Part Number	Device Identifier	ADVFC32KN
Function	32 Kbit (4096 x 8) FRAM (Ferroelectric Random Access Memory)
Technology	Ferroelectric RAM
Memory Size	32 Kbit	4096 x 8
Data Retention	Data retention at 85°C	10 years
Operating Voltage	Supply voltage range	2.7 V to 3.6 V
Standby Current	Current consumption in standby mode	1 μA (typical)
Active Current	Current consumption during read/write operations	2 mA (typical)
Access Time	Time required for a memory access	70 ns (maximum)
Write Cycle Time	Time required to complete a write cycle	150 ns (maximum)
Operating Temperature	Temperature range for normal operation	-40°C to +85°C
Storage Temperature	Temperature range for storage	-55°C to +125°C
Package Type	Package form factor	SOIC-8
Pin Configuration	Pin layout	VCC, GND, A0-A11, DQ0-DQ7, /CS, /WE, /OE
Endurance	Number of read/write cycles	10^12 (1 trillion)
Organization	Memory organization	4096 x 8

Instructions

1. Power Supply:

   • Ensure that the supply voltage (VCC) is within the specified range of 2.7 V to 3.6 V.
   • Connect the ground (GND) pin to the system ground.

2. Address Lines:

   • Use the address lines (A0-A11) to select the desired memory location. The device supports up to 4096 addresses.

3. Data Lines:

   • Data input/output is handled through the data lines (DQ0-DQ7).

4. Control Signals:

   • /CS (Chip Select): Active low signal to enable the device. When /CS is high, the device is in standby mode.
   • /WE (Write Enable): Active low signal to initiate a write operation. When /WE is high, the device is in read mode.
   • /OE (Output Enable): Active low signal to enable data output. When /OE is high, the data output is disabled.

5. Read Operation:

   • Set /CS and /OE low to enable the device and data output.
   • Apply the desired address to the address lines.
   • Data will be available on the data lines after the access time (70 ns maximum).

6. Write Operation:

   • Set /CS and /WE low to enable the device and initiate a write operation.
   • Apply the desired address to the address lines.
   • Apply the data to be written to the data lines.
   • Data will be written to the memory after the write cycle time (150 ns maximum).

7. Standby Mode:

   • Set /CS high to place the device in standby mode, reducing power consumption.

8. Temperature Considerations:

   • Ensure that the operating temperature is within the range of -40°C to +85°C for reliable operation.
   • Store the device within the storage temperature range of -55°C to +125°C.

9. Handling Precautions:

   • Handle the device with care to avoid static damage.
   • Follow proper soldering and handling procedures to prevent damage to the package and pins.

10. Endurance and Data Retention:

    • The device can withstand up to 1 trillion read/write cycles.
    • Data retention is guaranteed for 10 years at 85°C.

(For reference only)