Details
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Parameter | Symbol | Min | Typ | Max | Unit | Notes |
---|---|---|---|---|---|---|
Forward Voltage | VF | - | 1.1 | 1.3 | V @ IF = 10 A | |
Reverse Blocking Voltage | VR(RM) | 200 | - | - | V | |
Average Rectified Current | IF(AV) | - | - | 20 | A | TA = 25掳C |
Peak Surge Current | ISM | - | - | 200 | A | t = 8.3 ms, sine half wave |
Junction Temperature | TJ | - | - | 150 | 掳C | |
Storage Temperature | TSTG | -55 | - | 150 | 掳C | |
Thermal Resistance | R胃JC | - | 1.6 | - | 掳C/W |
Instructions for Use:
Mounting:
- Ensure that the device is mounted on a heatsink if operating at high current or in high ambient temperatures to maintain junction temperature within limits.
- Use appropriate thermal interface materials (TIMs) to enhance heat dissipation.
Electrical Connections:
- Connect the anode and cathode terminals correctly to avoid reverse bias conditions that could exceed the reverse blocking voltage.
- Ensure that the peak surge current does not exceed 200 A to prevent damage to the diode.
Operating Conditions:
- The average rectified current should not exceed 20 A at an ambient temperature of 25掳C.
- Monitor the junction temperature to ensure it does not exceed 150掳C to prevent thermal runaway.
Storage:
- Store the device in a dry environment with temperatures between -55掳C and 150掳C to maintain reliability.
Handling:
- Handle the device with care to avoid mechanical stress or damage to the leads.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
Testing:
- Use appropriate test equipment and methods to verify the parameters before integrating the diode into the circuit.
- Perform tests under controlled conditions to ensure accurate results.
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