Details

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BUY TF20N60 https://www.utsource.net/itm/p/11712067.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	600	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	20	-	A	TC = 25掳C
Pulse Drain Current	IDpeak	-	40	-	A	tp = 10 渭s, IGT = 5 A
Power Dissipation	PTOT	-	380	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	0.75	-	掳C/W
Total Gate Charge	QG	-	110	-	nC
Input Capacitance	Ciss	-	1900	-	pF	VDS = 400 V, f = 1 MHz
Output Capacitance	Coss	-	430	-	pF	VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	120	-	pF	VDS = 400 V, f = 1 MHz
Turn-On Delay Time	td(on)	-	45	-	ns	VDS = 400 V, ID = 10 A, VGS = 15 V
Rise Time	tr	-	70	-	ns	VDS = 400 V, ID = 10 A, VGS = 15 V
Turn-Off Delay Time	td(off)	-	45	-	ns	VDS = 400 V, ID = 10 A, VGS = 15 V
Fall Time	tf	-	70	-	ns	VDS = 400 V, ID = 10 A, VGS = 15 V

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use thermal paste or a thermal pad to improve thermal conductivity between the device and the heatsink.

2. Biasing:

   • Apply the gate-source voltage (V_GS) carefully to avoid exceeding the maximum ratings.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

3. Operation:

   • Operate within the specified drain-source voltage (V_DS) and continuous drain current (I_D) limits.
   • For pulse applications, ensure the pulse duration and peak current do not exceed the specified values.

4. Storage:

   • Store the device in a dry, cool place within the storage temperature range to prevent damage.

5. Handling:

   • Handle with care to avoid mechanical stress and static discharge.
   • Use appropriate ESD protection when handling the device.

6. Testing:

   • Perform all tests under controlled conditions to ensure accurate results.
   • Refer to the datasheet for specific test conditions and procedures.

(For reference only)