Details

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BUY BSC028N06NS https://www.utsource.net/itm/p/11712185.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	60	-	V	Continuous
Gate-Source Voltage	VGS	-15	-	15	V	Continuous
Continuous Drain Current	ID	-	2.8	-	A	TC = 25掳C, VDS = 60V, VGS = 10V
Continuous Drain Current	ID	-	2.3	-	A	TC = 70掳C, VDS = 60V, VGS = 10V
Continuous Drain Current	ID	-	1.8	-	A	TC = 100掳C, VDS = 60V, VGS = 10V
Pulse Drain Current	ID(pulse)	-	7.2	-	A	tp = 10ms, IG = 1A, VDS = 60V, VGS = 10V
Gate Charge	QG	-	20	-	nC	VGS = 10V, ID = 2.8A
Input Capacitance	Ciss	-	1400	-	pF	VDS = 10V, f = 1MHz
Output Capacitance	Coss	-	280	-	pF	VDS = 10V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	220	-	pF	VDS = 10V, f = 1MHz
On-State Resistance	RDS(on)	-	0.025	-	惟	VGS = 10V, ID = 2.8A, TJ = 25掳C
On-State Resistance	RDS(on)	-	0.035	-	惟	VGS = 10V, ID = 2.8A, TJ = 100掳C
Threshold Voltage	VGS(th)	1.0	1.5	2.0	V	ID = 250渭A, TJ = 25掳C
Power Dissipation	PTOT	-	3.6	-	W	TC = 25掳C, R胃JC = 1.5K/W
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (V_DS) does not exceed 60V.
   • The gate-source voltage (V_GS) should be kept between -15V and +15V.

2. Current Ratings:

   • The continuous drain current (I_D) should not exceed 2.8A at 25掳C, 2.3A at 70掳C, and 1.8A at 100掳C.
   • For pulse conditions, the maximum drain current (I_D(pulse)) is 7.2A for a pulse duration of 10ms.

3. Thermal Management:

   • The power dissipation (P_TOT) should not exceed 3.6W at a case temperature (T_C) of 25掳C.
   • The junction temperature (T_J) must not exceed 150掳C.
   • Use appropriate heat sinks or cooling methods to manage the temperature, especially under high current or power conditions.

4. Gate Drive:

   • Apply a gate-source voltage (V_GS) of at least 10V to ensure the MOSFET is fully on and to minimize on-state resistance (R_DS(on)).
   • Be aware of the threshold voltage (V_GS(th)) range of 1.0V to 2.0V to avoid partial turn-on and potential overheating.

5. Capacitance Considerations:

   • Account for the input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) when designing circuits to minimize switching losses and ensure stable operation.

6. Storage and Handling:

   • Store the device within the storage temperature range of -55掳C to 150掳C.
   • Handle with care to avoid damage from electrostatic discharge (ESD).

By following these guidelines, you can ensure reliable and efficient operation of the BSC028N06NS MOSFET.

(For reference only)