Details
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IC FLASH 1M PARALLEL 32DIP
Parameter | Description | Value |
---|---|---|
Device Type | Non-Volatile Memory | 1 Mbit (128K x 8) Flash EEPROM |
Package | Plastic DIP | 32-Pin |
Operating Voltage (Vcc) | Supply Voltage | 4.5V to 5.5V |
Programming Voltage (Vpp) | Programming Voltage | 12.0V ± 0.5V |
Data Retention | Data Retention Time | 10 years (at 85°C) |
Write Cycle Time | Time to Program a Byte | 4 ms typical, 10 ms maximum |
Erase Cycle Time | Time to Erase the Device | 5 seconds typical, 10 seconds maximum |
Endurance | Number of Write/Erase Cycles | 100,000 cycles |
Temperature Range | Operating Temperature | -40°C to +85°C |
Storage Temperature | Storage Temperature | -65°C to +150°C |
Access Time | Read Access Time | 70 ns maximum |
Standby Current | Quiescent Current | 1 μA maximum (Vcc = 5V) |
Active Current | Active Current | 15 mA maximum (Vcc = 5V) |
Programming Current | Programming Current | 15 mA maximum (Vpp = 12V) |
Instructions for Use:
Power Supply:
- Connect Vcc to a stable 5V supply.
- Connect Vpp to 12V during programming and 5V during normal operation.
Addressing:
- Apply the desired address to the A0-A16 pins to select the memory location.
Data Input/Output:
- During read operations, data is output on the D0-D7 pins.
- During write operations, data is input on the D0-D7 pins.
Control Signals:
- Chip Select (CS): Low to enable the device.
- Output Enable (OE): Low to enable data output.
- Write Enable (WE): Low to initiate a write cycle.
- Program Enable (PGM): Low to enter programming mode.
Programming:
- Set CS, OE, and WE low.
- Set PGM low and apply 12V to Vpp.
- Apply the address and data to be programmed.
- Hold WE low for the required write cycle time (4 ms typical, 10 ms maximum).
Erasing:
- Set CS, OE, and WE high.
- Set PGM low and apply 12V to Vpp.
- Hold PGM low for the required erase cycle time (5 seconds typical, 10 seconds maximum).
Reading:
- Set CS and OE low.
- Apply the desired address.
- Data will appear on the D0-D7 pins after the access time (70 ns maximum).
Power Down:
- Ensure Vcc is removed before disconnecting Vpp to avoid damage.
Handling:
- Handle with care to avoid static discharge.
- Store in a dry environment to prevent moisture damage.
For detailed timing diagrams and additional information, refer to the datasheet provided by the manufacturer.
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