Details

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BUY 2SC4706 https://www.utsource.net/itm/p/11720307.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	90	V
Emitter-Base Voltage (Reverse)	VEBO	-	-	5	V
Collector Current (Continuous)	IC	-	15	-	A
Collector Current (Pulse)	IC(P)	-	30	-	A
Base Current (Continuous)	IB	-	1.5	-	A
Power Dissipation	PT	-	130	-	W
Junction Temperature	TJ	-20	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance (Junction to Case)	R胃JC	-	1.2	-	掳C/W

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use a suitable heatsink with thermal grease to enhance heat dissipation.

2. Biasing:

   • Apply base current (I_B) carefully to avoid exceeding the maximum base current rating.
   • Ensure that the collector current (I_C) does not exceed the continuous or pulse ratings.

3. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (V_CEO), collector-base voltage (V_CBO), or emitter-base voltage (V_EBO).

4. Power Dissipation:

   • Keep the power dissipation (P_T) within the specified limit to prevent overheating and potential damage to the transistor.

5. Temperature Considerations:

   • Operate the transistor within the specified junction temperature (T_J) and storage temperature (T_STG) ranges.
   • Monitor the ambient temperature and adjust the heat sink accordingly.

6. Handling:

   • Handle the transistor with care to avoid mechanical damage.
   • Use anti-static precautions to prevent electrostatic discharge (ESD) damage.

7. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.

By following these instructions, you can ensure optimal performance and longevity of the 2SC4706 transistor.

(For reference only)