SVF20N50F SVF20N50 20N50 20A 500V MOS TO-220F

SVF20N50F SVF20N50 20N50 20A 500V MOS TO-220F

Category: Transistors

Specifications
SKU
11720703
Details

BUY SVF20N50F SVF20N50 20N50 20A 500V MOS TO-220F https://www.utsource.net/itm/p/11720703.html

Parameter Symbol Value Unit
Drain-Source On-State Resistance RDS(on) 0.18 惟 (Typical @ VGS=10V, ID=20A)
Continuous Drain Current ID 20 A (TC=25掳C)
Pulse Drain Current ID(peak) 100 A (t=10渭s, TC=25掳C)
Drain-Source Breakdown Voltage VDS(off) 500 V (ID=250渭A)
Gate-Source Voltage VGS 卤20 V
Total Power Dissipation PTOT 150 W (TC=25掳C)
Junction Temperature TJ -55 to +150 掳C
Storage Temperature TSTG -55 to +150 掳C
Thermal Resistance, Junction to Case R胃JC 1.5 掳C/W
Thermal Resistance, Junction to Ambient R胃JA 62.5 掳C/W

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
    • Use a thermal compound between the MOSFET and the heatsink to improve thermal conductivity.
  2. Biasing:

    • Apply a gate-source voltage (VGS) of at least 10V to fully turn on the MOSFET and minimize RDS(on).
    • Do not exceed the maximum gate-source voltage (卤20V).
  3. Current Handling:

    • The continuous drain current (ID) should not exceed 20A at a case temperature of 25掳C.
    • For pulse applications, ensure that the peak current does not exceed 100A for durations of 10渭s or less.
  4. Voltage Ratings:

    • The drain-source voltage (VDS) must not exceed 500V to prevent breakdown.
    • Ensure that the supply voltage and any transient voltages are within this limit.
  5. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it remains within the -55掳C to +150掳C range.
    • Use the thermal resistance values (R胃JC and R胃JA) to calculate the required heatsink size.
  6. Storage:

    • Store the MOSFET in a dry environment within the temperature range of -55掳C to +150掳C.
  7. Handling:

    • Handle the MOSFET with care to avoid damage to the leads and the die.
    • Use appropriate ESD protection to prevent damage from static electricity.
  8. Testing:

    • Perform initial testing at low power levels to verify correct operation before applying full load conditions.
(For reference only)

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