Details

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BUY AOTF10N90 https://www.utsource.net/itm/p/11720730.html

Parameter	Value	Description
Part Number	AOTF10N90	-
Type	N-Channel MOSFET	-
VDS (Max)	100V	Maximum Drain-to-Source Voltage
VGS (Max)	卤20V	Maximum Gate-to-Source Voltage
RDS(on) (Typical)	90m惟 @ VGS = 10V	On-State Resistance at Gate-to-Source Voltage of 10V
ID (Continuous)	33A @ TC = 25掳C	Continuous Drain Current at Case Temperature of 25掳C
ID (Pulse)	100A @ TC = 25掳C	Pulse Drain Current at Case Temperature of 25掳C
Power Dissipation	140W @ TC = 25掳C	Maximum Power Dissipation at Case Temperature of 25掳C
Junction Temperature	-55掳C to +175掳C	Operating Junction Temperature Range
Storage Temperature	-65掳C to +150掳C	Storage Temperature Range
Package	TO-220	Package Type
Mounting	Through-Hole	Mounting Type

Instructions for Use

1. Handling Precautions:

   • Handle the AOTF10N90 with care to avoid damage to the leads and body.
   • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Soldering:

   • Preheat the device to 125掳C before soldering.
   • Soldering temperature should not exceed 260掳C.
   • Soldering time should not exceed 10 seconds per lead.

3. Thermal Management:

   • Ensure adequate heat sinking to manage the power dissipation, especially when operating at high current levels.
   • The thermal resistance (R_胃JC) from junction to case is 1.5掳C/W. Use this value to calculate the required heat sink.

4. Biasing:

   • Apply the gate-to-source voltage (V_GS) within the specified range to ensure reliable operation.
   • Avoid exceeding the maximum V_GS rating to prevent damage to the device.

5. Operating Conditions:

   • Ensure that the drain-to-source voltage (V_DS) does not exceed the maximum rated value.
   • Operate the device within the specified temperature range to avoid thermal runaway and ensure long-term reliability.

6. Testing:

   • Test the device under controlled conditions to verify its performance and ensure it meets the application requirements.
   • Use appropriate test equipment and follow safety guidelines during testing.

7. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against moisture and physical damage.

(For reference only)